, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf linear push-pull power transistor BLV861 features ? double stage internal input and output matching networks for an optimum wideband capability and high gain ? polysilicon emitter ballasting resistors for an optimum temperature profile ? gold metallization ensures excellent reliability. applications ? common emitter class-ab output stages of television transmitter amplifiers (sound and vision) operating in bands 4 and 5 (470 to 860 mhz). description npn silicon planar epitaxial transistor with two sections in push-pull configuration. the device is encapsulated in a sot289a 4-lead rectangular flange package, with a ceramic cap. pinning pin 1 2 3 4 5 symbol c1 c2 b1 b2 e description collector 1; note 1 collector 2; note 1 base 1 base 2 common emitters; note 2 notes 1. collectors c1 and c2 are internally connected. 2. common emitters are connected to the flange. 1nn y b2 3 ljlj4 top view fig.1 simplified outline (sot289a) and symbol. quick reference data rf performance at th = 25 c in a common emitter push-pull test circuit. mode of operation cw class-ab f (mhz) 860 vce (v) 28 pl (w) 100 gp (db) >8.5 tic (%) >55 agp (db) <1 n.) semi-conductors reserves the right in change test conditions, parameter limin and package dimensions xvithoiif notice information furrmhei) by nj semi-cumjucton it believed to be both accurate nml reliable .it the lime of guing to press. however \ semi -i oiijutlurs .bsiimcs no responsibility cor ;my errors itr oinis.simis jiscovured in its use \ seini-c iitidiiitiir* cncourases unrciner; to\uiil\< datasheets :ire i tirrent before plncinai tilers
uhf linear push-pull power transistor BLV861 limiting values in accordance with the absolute maximum rating system (iec 134). symbol vcbo vceo vebo ic ptot tstg tj parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) total power dissipation storage temperature operating junction temperature conditions open emitter open base open collector tmb = 25 c min. - - - - - -65 - max. 65 30 3 15 220 +150 200 unit v v v a w c c thermal characteristics symbol rfh j-mb rth mb-h parameter thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink conditions ptot = 220 w; note 1 value 0.8 0.2 unit k/w k/w note 1. thermal resistance is determined under specified rf operating conditions. 102 ic (a) 10 1 total dev (1) tmb (2) th = mgk766 x\, x - - f21\) >, \. s 10 vce(v) ice; both sections equally loaded. = 25 c. 70 c. fig.2 dc soar. 102
uhf linear push-pull power transistor BLV861 characteristics values apply to either transistor section; tj = 25 c unless otherwise specified. symbol v(br)cbo v(br)ceo v(br)ebo icbo hfe ahfe cc parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current dc current gain dc current gain ratio of both sections collector capacitance conditions ie = 0; ig = 35 ma ib = 0; ic = 90 ma ie = 2 ma; lc = 0 vcb = 28 v lc = 2.8a;vce = 10v |c = 4.5a;vce = 10v ie = ie= 0; vce = 28 v; f = 1 mhz; note 1 min. 65 30 3 - 30 0.67 ? typ. - - - - - - 47 max. - - - 3 120 1.5 ? unit v v v ma - - pf note 1. the value of cc is that of the die only; it is not measurable because of the internal matching network. application information rf performance at th = 25 c in a common emitter push-pull class-ab test circuit. mode of operation cw class-ab f (mhz) 860 vce (v) 28 icq (a) 0.1 pl (w) 100 gp (db) >8.5 tic (%) >55 agp (db) s1 ruggedness in class-ab operation the BLV861 is capable of withstanding a load mismatch corresponding to vswr = 3:1 through all phases under the conditions: th = 25 c; f = 860 mhz; vce = 28 v; icq = 0.1 a; pl = 100 w; r,h mb.h = 0.2 k/w.
t a { - d ?? 1 . i 1 1 f 5 t e 10 mm scale dimensions (millimetre dimensions are derived from the original inch dimensions) unit mm inches a 4.65 3.92 0.183 0.154 b 3.33 3.07 0.131 0.121 c 0.10 0.05 0.004 0.002 d 13.10 12.90 0.516 0.508 e 11.53 11.33 0.454 0.446 e 4.60 0.181 f 1.65 1.40 0.065 0.055 h 19.81 19.05 0.780 0.750 hi 4.85 4.34 0.191 0.171 p 3.43 3.17 0.135 0.125 q 2.31 2.06 0.091 0.081 q 21.44 0.844 "1 28.07 27.81 1.105 1.095 u2 11.81 11.56 0.465 0.455 w1 0.51 0.02 w2 1.02 0.04 "3 0.25 0.01 outline version sot289a references iec jedec elaj
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